Sharp 128W Thin Film Solar Panels

RRP:

~~$259.97~~

Your Price:

$244.20 (You save $15.77)

SKU:

110-0181

Shipping:

Calculated at checkout

Product Description

128/121/115 WATT THIN FILM MODULE

Thin Film Photovoltaics: The Next Evolution of Solar Technology

Sharp’s thin film product pairs amorphous silicon with a layer of microcrystalline silicon to achieve high stability and performance. Produced with less than one percent of the silicon used in crystalline solar cells, thin film products offer high performance with less semiconductor material. With a low temperature coefficient for output power, thin film generates greater energy than its crystalline silicon counterpart in geographic regions where temperatures are high. In warm climates, this translates into more kilowatt-hours per kilowatt.

Engineering Excellence
Tandem-junction structure (amorphous silicon/microcrystalline silicon) captures a wider part of the solar spectrum, converting more sunlight into electricity.
High Voltage Advantage
Proprietary design increases reliability by minimizing losses caused by module output variation.
Reliability
Microcrystalline layer provides superior long-term stability and higher module efficiency.
Durable
Four bypass diodes ensure maximum output under non-uniform operating conditions.
Innovative
Single-layer glass with polymeric backskin lowers pounds per watt and transportation costs. Modules are sized to optimize the greatest amount of power, easily handled by one person.
AVAILABLE ONLY IN QUANTITIES OF 20 OR GREATER - SORRY!

Specifications

	NA-V128H1	NA-V121H1	NA-V115H1
Maximum Power (Pmax):	128	121	115
Open-Circuit Voltage (Voc):	238	238	238
Short-Circuit Current (Isc):	0.846	0.830	0.810
Voltage at Maximum Power (Vpmax):	186 V	180 V	174 V
Current at Maximum Power (Ipmax):	0.688 A	0.673 A	0.661 A
Module Efficiency (η):	9.0%	8.5%	8.1%
Temperature Coefficient - Open Circuit Voltage (β):	-0.3%/°C
Temperature Coefficient - Short Circuit Current (α):	+0.07%/°C
Made in Japan The electrical data applies under standard test conditions (STC): Irradiance of 1,000 W/m² with an AM 1.5 spectrum at a cell temperature of 25°C. The power output is subject to a manufacturing tolerance of +10% / -5% Output values are post initial Stabler-Wronski decay; actual measured initial values will be greater (approximately 15% for power).
Specifications (I)
Cell:	Tandem architecture of amorphous and microcrystalline silicon
Cell Circuit:	45 cells in series by 6 in parallel per quadrant: 4 quadrants in series (1080 total cells)
Dimensions:	39.7" x 55.5" x 1.8" (1009 x 1409 x 46mm)
Weight:	42 lbs
Connection Type:	Cable with MC-4 connector
Bypass Diodes:	4 (one per quadrant)
Fire Rating:	Class C
Specifications (II)
Maximum System Voltage:	600 Vdc
Maximum Mechanical Load:	1,600 Pa
Series Fuse Rating:	2 A
Operating Temperature (cell):	-40 to +90°C
Storage Temperature:	-40 to +90°C
Storage Air Humidity:	Up to 90%
Installation Orientation:	Portrait